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Infineon FS75R12KE3GBOSA1 Igbt Array & Module Transistor N Channel 100 A 1.7 V 355 W 1.2 kV Archival Methods 01-037 0 receptacle housing

SKU: 93102442678
4.3
USD6535.51 USD6577.51

Pay in 4 interest-free payments of $1633.88 Learn more

Shipping Estimate
USA
  • USA
  • CAN

Ships within 48 hours · Estimated delivery Sep 19 - Sep 24

Description

0 receptacle housing

at the office or anywhere else you need a tidy

85 lb Box Dimensions (LxWxH) 4

UPC: 851093003092

8-step (0 to 7) counterbalance

Infineon FS75R12KE3GBOSA1 Igbt Array & Module Transistor N Channel 100 A 1.7 V 355 W 1.2 kV Archival Methods 01-037 0 receptacle housingThis is a IGBT Array & Module Transistor, N Channel, 100 A, 1. 7 V, 355 W, 1. 2 kV, Module product from INFINEON with the model number FS75R12KE3GBOSA1Product details Transistor Polarity N Channel DC Collector Current 100A Collector Emitter Saturation Voltage Vce(on) 1. 7V Power Dissipation Pd 355W Collector Emitter Voltage V(br)ceo 1. 2kV Transistor Case Style Module No. of Pins Operating Temperature Max 125C Product Range EconoPACK 3 Series RoHS

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